ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,369, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).
"Method for fabricating semiconductor structure and semiconductor structure" was invented by Xiaoguang Wang (Hefei, China), Huihui Li (Hefei, China), Qiang Zhang (Hefei, China), Shan Wang (Hefei, China) and Minmin Wu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The fabricating method includes: providing ...