US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Aug. 19 for "Capacitor and manufacturing method thereof, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,182, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Capacitor and manufacturing method thereof, and semiconductor device" was invented by Mengkang Yu (Hefei, China), Xingsong Su (Hefei, China) and Weiping Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a capacitor and a manufacturing method thereof, and a semiconductor device. The capacitor includes a plurality of bottom electrodes, a top electrode structure, a dielectric layer, and a gap filling layer, where the top electrode structure is formed on o...