US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Aug. 12 for "Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depth" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,586, issued on Aug. 12, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depth" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China) and Minmin Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate. A method includes the following operations. Multiple first trenches extending in a first direction are formed in the substrate. Multiple ...