US Patent Issued to CHANGXIN MEMORY TECHNOLGIES on April 15 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,417, issued on April 15, was assigned to CHANGXIN MEMORY TECHNOLGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Xiang Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate with a plurality of word line trenches and source/drain regions each adjacent to each word line trench; a word line located in the word line trench, which includes a first conductive layer located at a bottom of the word line trench, a single junction layer and a second conductive layer stacked in sequence, in which a projection of the word line on a sidewall of the word l...