US Patent Issued to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE on March 11 for "Method for fabricating a magnetoresistive element comprising discontinuous interconnect segments" (French Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,361, issued on March 11, was assigned to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris).

"Method for fabricating a magnetoresistive element comprising discontinuous interconnect segments" was invented by Sylvain Martin (Grenoble, France), Julien Louche (Saint-Martin-le-Vinoux, France) and Marc Drouard (Valence, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure concerns a method for fabricating a magnetoresistive element comprising a magnetic tunnel junction including a tunnel barrier layer, a first ferromagnetic layer and a second ferromagnetic layer; a writing current layer; and an interconnect layer configured for...