US Patent Issued to CENTRAL GLASS on Sept. 16 for "Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,922, issued on Sept. 16, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan).

"Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device" was invented by Hikaru Kitayama (Yamaguchi, Japan), Kunihiro Yamauchi (Yamaguchi, Japan) and Akiou Kikuchi (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a Beta-diketone and N...