US Patent Issued to Central Glass on May 20 for "Dry etching method, method for producing semiconductor device, and etching device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,244, issued on May 20, was assigned to Central Glass Co. Ltd. (Ube, Japan).

"Dry etching method, method for producing semiconductor device, and etching device" was invented by Kunihiro Yamauchi (Ube, Japan), Hikaru Kitayama (Ube, Japan) and Akifumi Yao (Ube, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dry etching method according to an embodiment of the present disclosure includes reacting an etching target film formed on a surface of a workpiece with a Beta-diketone and nitrogen dioxide to etch the etching target film in a non-plasma state, the etching target film containing a metal having an M-O bond energy of 5 eV or higher or an oxide...