US Patent Issued to CENTRAL GLASS on June 10 for "Single-crystal silicon carbide wafer, and single-crystal silicon carbide ingot" (Japanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,325,934, issued on June 10, was assigned to CENTRAL GLASS COMPANY Ltd. (Ube, Japan).

"Single-crystal silicon carbide wafer, and single-crystal silicon carbide ingot" was invented by Tomonori Umezaki (Tokyo) and Kazuto Kumagai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single-crystal silicon carbide wafer of the present invention includes boron at a concentration of 1.0x1016 atoms/cm3 or less, and a region where a misorientation in a crystal plane of the single-crystal silicon carbide wafer (31) is 50 arcsec or less is present on the surface. An area of the region is one fourth or more of an area of the surface of the single-crystal silicon ...