US Patent Issued to CENTRAL GLASS on Aug. 5 for "Metal material, method of producing metal material, method of passivating semiconductor processing apparatus, method of manufacturing semiconductor device, and method of manufacturing filled container" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,378,659, issued on Aug. 5, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan).

"Metal material, method of producing metal material, method of passivating semiconductor processing apparatus, method of manufacturing semiconductor device, and method of manufacturing filled container" was invented by Akiou Kikuchi (Yamaguchi, Japan), Ryoma Nomura (Yamaguchi, Japan) and Ryota Yoshimura (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The metal material of the present disclosure includes: a metal base; and a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound, the fluorine-containing ...