US Patent Issued to CENTER FOR HIGH PRESSURE SCIENCE AND TECHNOLOGY ADVANCED RESEARCH on Dec. 9 for "Method for preparing high-pressure state material capable of being detached from high-pressure device" (Chinese, American Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,491,483, issued on Dec. 9, was assigned to CENTER FOR HIGH PRESSURE SCIENCE AND TECHNOLOGY ADVANCED RESEARCH (Beijing).

"Method for preparing high-pressure state material capable of being detached from high-pressure device" was invented by Qiaoshi Zeng (Shanghai), Zhidan Zeng (Shanghai), Wendy L. Mao (Stanford, Calif.) and Ho-Kwang Mao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to the field of materials, in particular to a method for preparing a high-pressure state material that can be detached from a high-pressure device. The method comprising: placing a carbon material and a target material into a high-pressu...