US Patent Issued to Carl Zeiss SMT on April 29 for "Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures" (German, American Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,706, issued on April 29, was assigned to Carl Zeiss SMT GmbH (Oberkochen, Germany).

"Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures" was invented by Hans Michael Stiepan (Aalen, Germany), Thomas Korb (Schwaebisch Gmuend, Germany), Eugen Foca (Ellwangen, Germany), Alex Buxbaum (San Ramon, Calif.), Dmitry Klochkov (Schwaebisch Gmuend, Germany) and Jens Timo Neumann (Aalen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. ...