ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,323, issued on Sept. 9, was assigned to CanSemi Technology Inc. (Guangzhou, China).
"LDMOS device and fabrication method thereof" was invented by Rilin Zhang (Guangdong, China), Wenhu Liu (Guangdong, China) and Yonghua Zhang (Guangdong, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a LDMOS device and a fabrication method. By arranging a first field oxide, a second field oxide, a third field oxide, a gate polysilicon, and a gate oxide layer in the trench and making the surface of the gate polysilicon away from the trench flush with the trench opening, the lateral dimension of the LDMOS device is reduced. Meanwhile, by ...