US Patent Issued to CANSEMI TECHNOLOGY on Sept. 30 for "Semiconductor device structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,944, issued on Sept. 30, was assigned to CANSEMI TECHNOLOGY INC. (Guangzhou, China).

"Semiconductor device structure and method for forming same" was invented by Yohtz Julian Chang (Guangzhou, China), Yunbo Chen (Guangzhou, China), Canyang Huang (Guangzhou, China) and Zeyong Chen (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first an...