US Patent Issued to CanSemi Technology on Sept. 30 for "Semiconductor device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,394, issued on Sept. 30, was assigned to CanSemi Technology Inc. (Guangzhou, China).

"Semiconductor device and fabrication method thereof" was invented by Peixiong Gao (Guangdong, China), Junjie Wang (Guangdong, China) and Lei Shao (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device. The semiconductor device include: a substrate having a STI structure; a first polysilicon structure layer, an isolation dielectric layer, and a second polysilicon structure layer sequentially stacked on the STI structure. The first polysilicon structure layer is undoped polysilicon. The second polysili...