US Patent Issued to CANSEMI TECHNOLOGY on May 27 for "Metal-insulator-metal capacitor structure and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,523, issued on May 27, was assigned to CANSEMI TECHNOLOGY INC. (Guangzhou, China).

"Metal-insulator-metal capacitor structure and preparation method therefor" was invented by Xiang Liu (Guangdong, China) and Jiaxi Wang (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a metal-insulator-metal (MIM) capacitor structure and a method for fabricating the structure. The MIM capacitor structure includes: a substrate; a capacitor structure comprising a bottom metal layer, an interlayer dielectric layer and a top metal layer sequentially stacked over the substrate; an opening extending downward through the top metal layer into th...