US Patent Issued to CANON on Oct. 14 for "Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,259, issued on Oct. 14, was assigned to CANON K.K. (Tokyo).

"Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor" was invented by Ryo Hayashi (Yokohama, Japan), Masafumi Sano (Yokohama, Japan), Katsumi Abe (Kawasaki, Japan), Hideya Kumomi (Tokyo) and Kojiro Nishi (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm....