ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,836, issued on Nov. 4, was assigned to Canon K.K. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Ayako Furesawa (Tokyo), Yoshinori Tateishi (Kanagawa, Japan), Toshio Tomiyoshi (Kanagawa, Japan) and Takahiro Hachisu (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconducto...