US Patent Issued to Canon on Feb. 3 for "Photoelectric conversion apparatus and photoelectric conversion system having a concentration of impurity of a conductivity type in one region higher than another region" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,393, issued on Feb. 3, was assigned to Canon K.K. (Tokyo).

"Photoelectric conversion apparatus and photoelectric conversion system having a concentration of impurity of a conductivity type in one region higher than another region" was invented by Daiki Shirahige (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a diode in a layer having a first surface, a second surface opposite the first surface, and a third surface between the first and second surfaces. The diode includes a first region of a first conductivity type at first depth, a second region of a second conductivity type at second depth deeper than the first...