US Patent Issued to CAMBRIDGE GAN DEVICES on Oct. 28 for "III-nitride power semiconductor based heterojunction diode" (British Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,763, issued on Oct. 28, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"III-nitride power semiconductor based heterojunction diode" was invented by Florin Udrea (Cambridge, Great Britain), Martin Arnold (Cambridge, Great Britain), Loizos Efthymiou (Cambridge, Great Britain), Giorgia Longobardi (Cambridge, Great Britain) and Sheung Wai Fung (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "We describe a smart high voltage/power III-nitride semiconductor based diode or rectifier comprising first and second terminals, and further comprising an active device (e.g. a transistor such as a GaN HEMT transistor)...