ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,356, issued on May 6, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Mixed material power devices and driver circuits" was invented by Florin Udrea (Cambridge, Great Britain), Philip Neaves (Cambridge, Great Britain) and Loizos Efthymiou (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power integrated circuit comprising: a heterojunction structure Gallium Nitride, GaN, chip comprising at least one GaN layer and at least one Aluminium Gallium Nitride, AlGaN, layer wherein the GaN chip comprises at least one main power device comprising a source terminal, a drain terminal, a gate terminal and a two-d...