ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,088, issued on May 20, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).
"Heterojunction based half bridge" was invented by Florin Udrea (Cambridge, Great Britain), Loizos Efthymiou (Cambridge, Great Britain) and Giorgia Longobardi (Cambridge, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "We describe a heterojunction based half bridge apparatus formed within a single active area comprising a first heterojunction device and a second heterojunction device, each heterojunction device comprising a drain and a source, each drain comprising a drain contact and each source comprising a source contact; wherein the drain c...