US Patent Issued to CAMBRIDGE GAN DEVICES on Aug. 5 for "Power semiconductor device with an auxiliary gate structure" (British Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,651, issued on Aug. 5, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Power semiconductor device with an auxiliary gate structure" was invented by Martin Arnold (Cambridge, Great Britain), Sheung Wai Fung (Cambridge, Great Britain), Loizos Efthymiou (Cambridge, Great Britain), Florin Udrea (Cambridge, Great Britain) and John William Findlay (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at l...