US Patent Issued to CAMBRIDGE GAN DEVICES on April 1 for "III-V semiconductor device with integrated power transistor and start-up circuit" (British Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,724, issued on April 1, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambourne, Great Britain).

"III-V semiconductor device with integrated power transistor and start-up circuit" was invented by Florin Udrea (Cambridge, Great Britain), Loizos Efthymiou (Cambridge, Great Britain), Giorgia Longobardi (Cambridge, Great Britain) and Martin Arnold (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "An Ill-nitride semiconductor based heterojunction power device is disclosed and includes a first and second heterojunction transistors formed on a substrate. The first and second heterojunction transistors include first and second Ill-nitri...