US Patent Issued to C2Amps on Aug. 26 for "Asymmetric vertical nanowire MOSFET having asymmetric nanowire geometry near metal gate and method of fabricating thereof" (Swedish Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,375, issued on Aug. 26, was assigned to C2Amps AB (Limhamn, Sweden).

"Asymmetric vertical nanowire MOSFET having asymmetric nanowire geometry near metal gate and method of fabricating thereof" was invented by Lars-Erik Wernersson (Lund, Sweden) and Olli-Pekka Kilpi (Lund, Sweden).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method for fabricating an asymmetric vertical nanowire MOSFET on a semiconductor substrate comprising at least one vertical nanowire, comprising a core portion and a shell portion circumscribing the core portion. The method comprises depositing a protection layer on the semiconductor substrate, forming a top ...