US Patent Issued to BYD SEMICONDUCTOR on Oct. 14 for "Semiconductor cell structure, IGBT cell structure, semiconductor structure, and method for manufacturing IGBT cell structure" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,243, issued on Oct. 14, was assigned to BYD SEMICONDUCTOR COMPANY Ltd. (Shenzhen, China).

"Semiconductor cell structure, IGBT cell structure, semiconductor structure, and method for manufacturing IGBT cell structure" was invented by Baowei Huang (Shenzhen, China) and Haiping Wu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor (IGBT) cell structure includes an N-type drift layer, an N-type termination layer, a P-type collector layer, and a collector metal layer stacked in sequence. On a side of the N-type drift layer away from the P-type collector layer and in the N-type drift layer, the IGBT cell s...