US Patent Issued to Buhler Alzenau on Nov. 11 for "In-situ etch rate or deposition rate measurement system" (German Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,676, issued on Nov. 11, was assigned to Buhler Alzenau GmbH (Alzenau, Germany).

"In-situ etch rate or deposition rate measurement system" was invented by Steffen Guertler (Bohlen, Germany), Mario Berlinger (Leipzig, Germany) and Ralf Sperling (Leipzig, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material on...