ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,052, issued on Nov. 11, was assigned to BRUKER NANO GMBH (Berlin).
"Hybrid integrated silicon drift detector and method for fabrication thereof" was invented by Luca Bombelli (Milan), Oliver Boslau (Munich) and Marcus Noack (Potsdam, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention refers to a hybrid integrated silicon drift detector (HiSDD) for X-ray detection, particularly to a HiSDD combining a silicon drift detector (SDD) with a low-noise preamplifier on a SDD sensor chip to improve the electrical and structural properties of the detector assembly. The invention further refers to a corresponding method for the fabrica...