ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,179, issued on March 25, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing).
"Method for preparing interlayer insulating layer and method for manufacturing thin film transistor, thin film transistor" was invented by Ming Wang (Beijing), Ce Zhao (Beijing) and Wei Song (Beijing).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. T...