ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,227, issued on June 17, was assigned to BOE Technology Group Co. Ltd. (Beijing).

"Thin film transistor, semiconductor substrate and X-ray flat panel detector" was invented by Jie Huang (Beijing), Zhengliang Li (Beijing), Ce Ning (Beijing), Hehe Hu (Beijing), Nianqi Yao (Beijing), Kun Zhao (Beijing), Fengjuan Liu (Beijing), Tianmin Zhou (Beijing) and Liping Lei (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. T...