US Patent Issued to BOE Technology Group on April 8 for "Thin film transistor with silicon nanowire channel, display substrate, and display device" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,754, issued on April 8, was assigned to BOE Technology Group Co. Ltd. (Beijing).

"Thin film transistor with silicon nanowire channel, display substrate, and display device" was invented by Jiayu He (Beijing), Ce Ning (Beijing), Zhengliang Li (Beijing), Hehe Hu (Beijing), Jie Huang (Beijing), Nianqi Yao (Beijing), Zhi Wang (Beijing) and Feng Guan (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate ...