US Patent Issued to BESANG on Feb. 4 for "Structures of gate contact formation for vertical transistors" (Oregon Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,211, issued on Feb. 4, was assigned to BESANG INC. (Hillsboro, Ore.).

"Structures of gate contact formation for vertical transistors" was invented by Sang-Yun Lee (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical t...