ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,460,292, issued on Nov. 4, was assigned to BENEQ OY (Espoo, Finland).
"Atomic layer deposition apparatus and a method" was invented by Mika Jauhiainen (Espoo, Finland) and Pekka Soininen (Espoo, Finland).
According to the abstract* released by the U.S. Patent & Trademark Office: "An atomic layer deposition apparatus includes a substrate support having a support surface, a precursor supply head having an output face, and a rotating mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The apparatus further includes a process chamber provided with a discharge connection for discharging gases from the process chamber."
The patent was fi...