US Patent Issued to Bell Semiconductor on Sept. 2 for "Method of making a semiconductor device using a dummy gate" (New York Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,368, issued on Sept. 2, was assigned to Bell Semiconductor LLC (Chicago).

"Method of making a semiconductor device using a dummy gate" was invented by Nicolas Loubet (Guilderland, N.Y.) and Prasanna Khare (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer is used to define a plurality of fins in the semiconductor layer. A gate is formed over the plurality of...