US Patent Issued to Bell Semiconductor on April 15 for "Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods" (New York, California Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,234, issued on April 15, was assigned to Bell Semiconductor LLC (Chicago).

"Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods" was invented by Qing Liu (Irvine, Calif.), Prasanna Khare (Schenectady, N.Y.) and Nicolas Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurali...