ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,782, issued on July 1, was assigned to BeijingBeida Jubang Science & Technology Co. Ltd (Beijing) and Weixian Jubang New Material Sei & Tech Co. Ltd (Hebei, China).

"Quantum dot (QD) and QD composite, and preparation methods thereof" was invented by Zhiqiang Zhao (Beijing), Xiaobin Gao (Beijing), Baiyu Zhao (Beijing) and Dehe Yin (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a quantum dot (QD). The QD has a core-shell structure, and specifically has a structure of CdZnSeS/CdZnSe/CdZnS/ZnS, where there is a metal halide ligand between a CdZnS shell and a ZnS shell and outside the ZnS shell. The present disclo...