US Patent Issued to BEIJING TSD SEMICONDUCTOR on Sept. 16 for "Method and chemical mechanical planarization device for in-situ measurement of film thickness" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,490, issued on Sept. 16, was assigned to BEIJING TSD SEMICONDUCTOR Co. LTD. (Beijing).

"Method and chemical mechanical planarization device for in-situ measurement of film thickness" was invented by Weitao Meng (Beijing), Huiyan Zhou (Beijing) and Jile Jiang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method and chemical mechanical planarization device for in-situ measurement of film thickness, the method including: generating a measured spectrum based on a reflection spectrum of a wafer film and an equivalent light source spectrum, where the equivalent light source spectrum is data of a correspondence between wavelength ...