US Patent Issued to BEIJING TSD SEMICONDUCTOR on Aug. 26 for "Method and device for determining parameters of near-surface dielectric layer in wafer grinding scene" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,397,394, issued on Aug. 26, was assigned to BEIJING TSD SEMICONDUCTOR Co. LTD. (Beijing).

"Method and device for determining parameters of near-surface dielectric layer in wafer grinding scene" was invented by Jile Jiang (Beijing), Weitao Meng (Beijing) and Huiyan Zhou (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a method and device for determining parameters of a near-surface dielectric layer in a wafer grinding scene. The method includes: obtaining a measured spectrum in a state in which a surface of a wafer has a first layer and a second layer, where the wafer includes a wafer substrate and a wafer film, para...