US Patent Issued to BEIJING TONGMEI XTAL TECHNOLOGY on June 17 for "Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer" (American, Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,319, issued on June 17, was assigned to BEIJING TONGMEI XTAL TECHNOLOGY Co. LTD. (Beijing).

"Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer" was invented by Rajaram Shetty (Fremont, Calif.), Yuanli Wang (Beijing), Weiguo Liu (Fremont, Calif.), Yvonne Zhou (Fremont, Calif.) and Sung-Nee George Chu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3x1014 atoms/cc to 10x1018 atoms/cc, boron with an atomic concentration of from 1x1016 atoms/cc to 10x1...