US Patent Issued to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Oct. 7 for "Semiconductor memory cell structure, semiconductor memory, preparation method and application thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,580, issued on Oct. 7, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor memory cell structure, semiconductor memory, preparation method and application thereof" was invented by Qi Wang (Beijing) and Huilong Zhu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor memory cell structure, a semiconductor memory as well as preparation method and application thereof. The semiconductor memory cell structure includes: a substrate; and a first transistor layer, an isolation layer and a second t...