ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,151, issued on Nov. 18, was assigned to Beijing E-Town Semiconductor Technology Co. Ltd. (Beijing., China) and Mattson Technology Inc. (Fremont, Calif.).
"Preheat processes for millisecond anneal system" was invented by Markus Lieberer (Augsburg, Germany), Christian Pfahler (Ulm, Germany), Markus Hagedorn (Ulm, Germany), Michael vanAbbema (Ulm, Germany) and Alexandr Cosceev (Lonsee, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond ann...