US Patent Issued to Beijing BOE Technology Development on Nov. 4 for "Quantum dot light emitting diode, manufacturing method thereof and display apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,888, issued on Nov. 4, was assigned to Beijing BOE Technology Development Co. Ltd. (Beijing).

"Quantum dot light emitting diode, manufacturing method thereof and display apparatus" was invented by Wenhai Mei (Beijing) and Yichi Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport lay...