US Patent Issued to Beijing BOE Technology Development on Nov. 18 for "Light emitting transistor, manufacturing method thereof and display substrate" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,893, issued on Nov. 18, was assigned to Beijing BOE Technology Development Co. Ltd. (Beijing).

"Light emitting transistor, manufacturing method thereof and display substrate" was invented by Huajie Yan (Beijing), Zhiqiang Jiao (Beijing), Lu Wang (Beijing) and Peng Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting transistor, a method of manufacturing the same, and a display substrate are provided. The light emitting transistor includes: a gate electrode on a base substrate; an insulating layer on a side of the gate electrode away from the base substrate; a first electrode on a side of the insulating layer away from the ba...