US Patent Issued to Beijing BOE Technology Development, BOE Technology Group on Sept. 23 for "Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,438, issued on Sept. 23, was assigned to Beijing BOE Technology Development Co. Ltd. (Beijing) and BOE Technology Group Co. Ltd. (Beijing).

"Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode" was invented by Aidi Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer inclu...