US Patent Issued to BEIHANG UNIVERSITY on Sept. 30 for "Memory array, memory, preparing method and writing method" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,938, issued on Sept. 30, was assigned to BEIHANG UNIVERSITY (Beijing).

"Memory array, memory, preparing method and writing method" was invented by Weisheng Zhao (Beijing), Jingle Chen (Beijing), Kaihua Cao (Beijing) and Gefei Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory array, a memory, a preparing method and a writing method. Some embodiments relate to a memory array for a magnetoresistive random access memory and a manufacturing method thereof. The memory array includes: a plurality of memory cells arranged in an array and a conductor layer; each of the memory cells includes: a write transistor, a first end ...