US Patent Issued to Battelle Memorial Institute on April 15 for "Stabilized porous silicon structure for highly stable silicon anode and methods of making" (Washington Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,275,641, issued on April 15, was assigned to Battelle Memorial Institute (Richland, Wash.).

"Stabilized porous silicon structure for highly stable silicon anode and methods of making" was invented by Ji-Guang Zhang (Richland, Wash.), Ran Yi (Richland, Wash.), Qiuyan Li (Richland, Wash.), Sujong Chae (Richland, Wash.), Xiaolin Li (Richland, Wash.), Yaobin Xu (Richland, Wash.) and Chongmin Wang (Richland, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Stabilized porous silicon particles are disclosed. The particles include a porous silicon particle comprising a plurality of interconnected silicon nanoparticles and (i) a heterogeneous layer comprising...