US Patent Issued to BASF on June 17 for "Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt" (Taiwanese, German Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,331,239, issued on June 17, was assigned to BASF SE (Ludwigshafen am Rhein, Germany).

"Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt" was invented by Joannes Theodorus Valentinus Hoogboom (Ludwigshafen, Germany), Jhih Jheng Ke (Taoyuan, Taiwan), Che Wei Wang (Taoyuan, Taiwan), Andreas Klipp (Ludwigshafen, Germany) and Yi Ping Cheng (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copp...