US Patent Issued to BASF on Jan. 13 for "Use of a composition and a process for selectively etching silicon" (German Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,464, issued on Jan. 13, was assigned to BASF SE (Ludwigshafen am Rhein, Germany).

"Use of a composition and a process for selectively etching silicon" was invented by Francisco Javier Lopez Villanueva (Ludwigshafen, Germany), Sven Hildebrandt (Ludwigshafen, Germany) and Andreas Klipp (Ludwigshafen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a method of using a composition for selectively etching a silicon layer in the presence of a layer including a silicon germanium alloy, the composition including: (a) 4 to 15% by weight of an amine of formula (E1), and (b) water, where XE1, XE2, and XE3 are independently selected f...