ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,741, issued on Nov. 4, was assigned to Azur Space Solar Power GmbH (Heilbronn, Germany).

"Stacked high-blocking InGaAs semiconductor power diode" was invented by Thorsten Wierzkowski (Heilbronn, Germany) and Daniel Fuhrmann (Heilbronn, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked high-blocking III-V semiconductor power diode and manufacturing method, wherein the III-V semiconductor power diode comprises a first highly doped semiconductor contact area, a low-doped semiconductor drift region disposed beneath the first semiconductor contact area, a highly doped second semiconductor contact area disposed beneath the semiconductor drif...