US Patent Issued to AXT on Aug. 26 for "Method and system for vertical gradient freeze 8 inch gallium arsenide substrates" (California, New York Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,486, issued on Aug. 26, was assigned to AXT INC. (Fremont, Calif.).

"Method and system for vertical gradient freeze 8 inch gallium arsenide substrates" was invented by Weiguo Liu (San Leandro, Calif.), Rajaram Shetty (Niskayuna, N.Y.) and Wei Zhang (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more hea...