US Patent Issued to AUP on July 15 for "Active device substrate and manufacturing method of active device substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,952, issued on July 15, was assigned to AUP Corp. (Hsinchu, Taiwan).

"Active device substrate and manufacturing method of active device substrate" was invented by Chen-Shuo Huang (Hsinchu, Taiwan), Shang-Lin Wu (Hsinchu, Taiwan), Kuo-Kuang Chen (Hsinchu, Taiwan) and Chih-Hung Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An active device substrate includes a substrate, a first thin film transistor located above the substrate and a second thin film transistor located above the substrate. The first thin film transistor includes a first metal oxide layer, a first gate, a first source and a first drain. A first gate dielectric lay...